EVG Supports Resolution of CPO Manufacturing Challenges for AI Data Centers

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EVG Supports Resolution of CPO Manufacturing Challenges for AI Data Centers

Published2026.09.02 11:27

One-Stop Support from Process Development to Mass Production via Wafer Bonding and NIL Technology

As demand for Co-Packaged Optics (CPO), a high-bandwidth and low-power optical interconnect technology, rises alongside AI infrastructure expansion, EV Group (hereinafter EVG) leads support across all manufacturing stages of CPO with its wafer bonding and nanoimprint lithography (NIL) based process portfolios.

On the 2nd, EVG announced it is collaborating with customers and partners across the entire CPO ecosystem, targeting hyperscale data center, AI infrastructure, and high-performance computing (HPC) markets.

Its policy encompasses all stages of the manufacturing value chain from process development through high-volume manufacturing (HVM).

As the surge in AI workloads highlights the limitations of existing copper interconnects in bandwidth, latency, and power efficiency, semiconductor industry adoption of CPO is rapidly expanding.

CPO integrates photonic integrated circuits (PICs), lasers, and optical structures into a single package, placing optical I/O in close proximity to computing elements.

As physical and manufacturing characteristics differ by constituent material, higher integration density requires new process technologies.

EVG stated that through its NILPhotonics® Competence Center and Heterogeneous Integration Competence Center™ (HICC), it enables customers to develop and verify designs and processes in production-ready environments before transitioning to mass production.

Dr. Bernd Dielacher, Business Development Director at EVG, stated, "Integrating photonic and electronic components with advanced packaging requires more than individual solutions; comprehensive process expertise is necessary."

Key technologies EVG applies to CPO manufacturing are as follows:

△Hybrid bonding: Minimizing parasitic effects between PIC and electronic integrated circuits (EIC) while achieving high-density integration △Fusion bonding: Supporting heterogeneous integration of next-generation optical modulation materials such as thin-film lithium niobate (TFLN) and barium titanate (BTO) △Room-temperature bonding: Forming low optical loss interfaces and thermal management through diamond and SiC heat spreader integration △NIL: Scalable manufacturing of out-of-plane optical coupling elements such as grating couplers and beam shaping devices △Temporary bonding and debonding: Supporting laser diode manufacturing and wafer thinning processes for advanced packaging.

EVG anticipates that the industry will transition from CPO to optical I/O chiplet architectures and 3D photonic-electronic integration, and stated it plans to expand its support scope from current CPO to next-generation optical I/O architectures.

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