Samsung Electronics Expands High NA EUV and 12-inch Mask Collaboration with ASML
Published2026.09.08 15:47Target First Application of High NA EUV in D-RAM Manufacturing by 2028
The industry currently uses 6-inch masks as the standard, but transitioning to 12-inch masks would eliminate stitching constraints—where patterns are divided, exposed, and then joined together—thereby enabling improved fab productivity and reduced chip manufacturing costs, the company explained.
The more advanced semiconductors are, with hundreds of billions of transistors integrated, the more fully the performance of High NA EUV equipment can be utilized through 12-inch masks.
Samsung Electronics plans to participate in joint research and standard development activities within the consortium.
High NA EUV is a next-generation lithography technology that increases the numerical aperture (NA) compared to conventional EUV, enabling more precise patterning.
Both companies believe that through the application of this technology to memory processes, they can simultaneously achieve extension of the D-RAM miniaturization roadmap and process simplification.
Following foundry processes, the application scope of High NA EUV is expanding into the memory sector.
Christophe Fouquet, CEO of ASML, said, "In the face of a new era driven by AI, we look forward to leading innovation in next-generation semiconductor manufacturing together with Samsung Electronics."
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