Mouser, onsemi GaNEXUS GaN FET supply begins

This page was machine-translated and may differ from the original. View original

Mouser, onsemi GaNEXUS GaN FET supply begins

Published2026.09.11 07:53

Supporting 40V~650V voltage range, addressing power conversion for AI, data centers, and robotics

Mouser Electronics is supplying onsemi's GaNEXUS gallium nitride field-effect transistor (GaN FET). The product targets a wide range of applications requiring fast switching and high power density, including AI servers, data centers, industrial automation, robotics, and energy infrastructure.

Mouser Electronics announced on the 11th that it is beginning supply of onsemi's GaNEXUS GaN FET.

GaNEXUS leverages the wide bandgap characteristics of GaN to achieve fast switching, low gate and output charge, and improved efficiency.

It consists of discrete GaN HEMT (high-electron-mobility transistor) in enhancement-mode configuration and supports voltage ranges from 40V to 650V.

The product lineup also includes a 650V GaNEXUS smart GaN FET with integrated protection functions, which can simplify system integration.

GaNEXUS is applicable to low and mid-voltage systems including AI servers, 48V intermediate bus converters (IBC), battery backup units (BBU), and motor drives.

According to onsemi, it contributes to reducing magnetic component size while raising power density, thermal performance, and control stability, as well as reducing switching losses.

In high-voltage applications such as AI power shelves, high-voltage DC-DC conversion, PFC (power factor correction), and LLC power stages, magnetic component sizes can be reduced by up to 60% in high-frequency AC-DC and resonant power stages.

It is expected to increase power density in PFC, LLC, and high-voltage (HV) DC-DC architectures, while also providing benefits in thermal management and operational cost reduction.

Additionally, it can be utilized for mitigating design complexity and shortening development and certification periods.

#데이터센터 #AI 서버 #GaNEXUS #onsemi #전력전자 #전력변환 #GaN FET #모터드라이브 #wide bandgap #DC-DC 변환

To request a correction, reply or follow-up report on this article, see how to file a request. Previously published statements are collected in corrections & replies.