Infineon Unveils Industry's First SiC-Based 1200V IPM
The smallest DIP 36x23D package among 1200V IPMs
Reduce EMI with dual serial package molded housing


On the 8th, Infineon Technologies AG launched the 'CIPOS™ Maxi IPM IM828 series', the industry's first SiC-based 1200V transfer molded silicon carbide (SiC) highly integrated power module.

The new inverter solution offers excellent thermal conductivity and a wide range of switching speeds, making it suitable for three-phase AC motors and permanent magnet motors in variable speed drive applications such as industrial motor drives, pump drives, and active filters in HVAC.

The Siphos Maxi IPM integrates a six-channel 1200V SOI (Silicon on Insulator) gate driver and six CoolSiC™ MOSFETs to increase system reliability and reduce PCB size and system cost.

Infineon said, “The DIP 36x23D package of the new IPM series is the smallest among 1200V IPMs, achieving best-in-class power density and performance.” It also added, “The dual-series package molding housing provides excellent thermal performance and electrical insulation, making it suitable for demanding designs.”“It meets the EMI requirements and overload protection needs of the company,” he explained.

The 6-channel SOI gate driver utilizes a dead-time function to prevent damage during transient switching events. Undervoltage lockout and overcurrent shutdown are also provided on all channels. Multi-function pins enhance design flexibility for a variety of applications. A UL-certified temperature thermistor is also integrated.

The Siphos Maxi IM828 series, which provides all phase current monitoring with bottom emitter pin access, is available for order now. The 20A IM828-XCC offers power ratings up to 4.8kW.