TSMC·ASML Promote Transition to 12-inch Photomasks for High NA EUV...Target Mass Production in 2033
Published2026.09.09 04:14Promoting Pilot Line Construction in 2031
TSMC and ASML are pursuing cooperation in large-format photomask transition to enhance productivity in High NA EUV (extreme ultraviolet) exposure processes, a next-generation semiconductor manufacturing technology. The two companies plan to expand the currently used 6-inch photomasks to 12-inch specifications to increase productivity and cost competitiveness of next-generation processes.
TSMC and ASML announced on the 8th that they have launched a joint industry initiative for transitioning to 12-inch photomasks for High NA EUV. The two companies aim to establish a 12-inch photomask pilot line in 2031 and apply the related exposure system to mass production of advanced processes by 2033.
EUV exposure is a core process technology used in advanced semiconductor manufacturing. High NA EUV implements higher resolution than conventional EUV and is utilized in implementing fine processes.
According to the two companies, High NA EUV will first be applied to mass production using currently employed 6-inch photomasks, followed by expansion to 12-inch photomasks.
The introduction of 12-inch photomasks is expected to enable improved productivity, reduced manufacturing costs, and resolution of stitching constraints. Additionally, it is expected to support advanced semiconductor manufacturers in more efficiently utilizing the performance of High NA EUV.
Christophe Fouquet, Chief Executive Officer of ASML, stated, "12-inch photomasks will provide higher scanner productivity and help meet the demand for smaller, faster, and more energy-efficient semiconductors."
TSMC announced plans to introduce ASML's High NA EUV technology to mass production of advanced processes from 2030.
According to the company, as AI-related semiconductor design becomes more complex, the number of process layers requiring High NA EUV is expected to increase. Accordingly, the necessity for large-format photomask transition in the future is anticipated to expand.
The two companies established related cooperation frameworks ahead of the SPIE BACUS Conference held in Monterey, California. Major semiconductor manufacturers, photomask suppliers, and equipment and material companies also indicated their intention to participate in this project.
C.C. Wei, Chairman and Chief Executive Officer of TSMC, stated, "Through industry-wide cooperation, we expect to be able to provide the benefits of advanced technology more broadly."
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