Provides industry-leading power consumption and high robustness

Infineon Technologies AG (Korea CEO Seung-Soo Lee) announced the launch of the 1EDN EiceDRIVER™ product family.

These 1-channel low-side gate driver ICs are optimized for driving MOSFETs, IGBTs, and GaN power devices. Their pinouts and packages are fully compatible with industry standards, making them a direct replacement for existing designs.

Applications that can leverage the outstanding performance of these driver ICs include telecom and industrial SMPS, DC-DC converters, PFC in electric vehicle chargers, and industrial applications such as AC power tools, UPS, air conditioners, and fans. This new product family also supports wireless charging applications.

Compared to other single-channel low-side gate driver ICs, Infineon's 1EDN EiceDRIVER family offers the industry's lowest internal power consumption. The low-resistance output stage achieves over 30 percent higher efficiency. This provides additional design flexibility and allows more power devices to be driven within the thermal budget.

Additionally, the 1EDN family delivers industry-leading reverse current robustness with a 5A output. This eliminates the need for protection diodes when driving MOSFETs with high parasitic source inductance, such as those in TO-220 or TO-247 packages. Therefore, these new driver ICs enable customers to save BOM and PCB area.

Additionally, the 1EDN family features excellent -10V input robustness, ensuring a significant stability margin to prevent ground shift when driving gate transformers. Additional noise robustness protects against electrical transients at the input and prevents latch-up of the driver IC.

Additionally, the 1EDN family includes a variety of products with separate source and sink output terminals. This allows for easy optimization of turn-on and turn-off speeds and eliminates the need for an external diode. The 1EDN EiceDRIVER™ family is currently in mass production.