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Increased Adoption of WBG Devices, Essential for SiC and GaN Parameter Measurement

Google 우선 소스Published2022.09.06 16:57

▲ Applications using wide-bandgap devices (Capture - e4ds EEWebinar, Source - Tektronix)
Tektronix Shares WBG Device Parameter Measurement Solution

Wide Bandgap (WBG) semiconductors are being adopted in various applications. This is because they are faster than silicon-based semiconductors, have lower switching losses, and have a smaller form factor, contributing to a reduction in overall system costs.

Tektronix held a webinar on the 6th titled 'Introduction to WBG Characteristics and Test Solutions for High Power Measurement' on the e4ds online platform.

Kim Hwa-yeon, a manager at Tektronix who gave a presentation on this day, introduced the basic theory of WBG semiconductors and explained gallium nitride (GaN) and silicon carbide (SiC).

SiC is primarily used in automotive solutions requiring high thermal conductivity and targets high-power, high-voltage, and high-speed applications. GaN targets medium-power, high-voltage, ultra-high-speed, and ultra-high-frequency applications. It is used in chargers, adapters, communications, solar power, and OBCs for automotive applications.

Manager Kim explained the hardware configuration and parameter verification for WBG testing. He presented a test solution using 2600-PCT-4B and ACS Basic software, and 4200A and Clarius software.

Measurable parameters in GaN devices include threshold voltage, leakage current, on-state resistance, gate charge, and capacitance.

GaN and SiC have similar measurement parameters for IGBT test parameters. With the aforementioned equipment, it is possible to measure breakdown voltage, leakage current, threshold voltage, saturation voltage, gate charge, and capacitance.

Manager Kim emphasized, “The 2600-PCT can control and measure multiple Source Measure Units (SMUs) via software,” adding, “Safety is critical because the PCT handles high power.” The 2600-PCT uses test fixtures for protection and can be connected internally using banana cables.

He also added, “The 4200A is an instrument that allows for easy DC IV, CVU, and Pulsed IV measurements,” stating, “It features over 250 diverse test modules, which are continuously increasing through periodic updates.” The 4200A can also be customized for testing through C-based programming.

Meanwhile, Rafael della Giustina, a customized project business developer at Yole Développement, noted, “The power electronics industry moves in tandem with public services and climate change policy incentives,” adding, “These policies have led to a demand for high-efficiency, low-power electronic systems.”

He emphasized, “All products are becoming wireless, equipped with batteries, and mobile, and the semiconductor content, such as power semiconductors, is increasing in transportation.” The power device market reached $19 billion (approximately 26 trillion won) in 2020 and is projected to reach $26 billion (approximately 35 trillion won) four years later.

Details regarding specific test setups and wide-bandgap semiconductor outlooks can be found through the EE Webinar replay.
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