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[Webinar Review] Infineon: "When Using BMS MOSFETs in Parallel, Pay Attention to VGS(th)"

Google 우선 소스Published2023.05.12 16:43

▲Kim Yong-jin, Infineon Director

Explaining the differences in BMS configuration depending on the application
Introduction to important parameters when using MOSFETs in parallel

Infineon highlighted the importance of the battery management system (BMS), an electronic control circuit that monitors and regulates the charging and discharging of batteries in the rapidly growing battery-powered application market, and introduced the components of the BMS and Infineon's solutions.

Kim Yong-jin, Infineon's director, held a webinar on the topic of 'Understanding the Components of Battery Management Systems and Selection Criteria for Protective MOSFETs' at the e4ds news webinar on the 9th. He presented on the following topics: △Explanation of the basic components and operation of BMS, △Things to consider when selecting MOSFETs as protection switches, and △Infineon's solutions for BMS.

BMS protects lithium-ion batteries, has SOC (State of Charge) that predicts and displays the remaining capacity of the battery, SOH (State of Health) that predicts the battery life, balances each battery cell when multiple batteries are connected in series, and verifies whether the battery is genuine.

BMS is being applied in a variety of applications, from small electronic devices such as smart speakers and laptops to small motor-based applications such as cordless vacuum cleaners, drones, and robots, to large motor-based applications such as e-bikes, and to large industrial applications such as servers and ESS.
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The components of the BMS are: △Battery Protection Unit that protects the battery by positioning MOSFETs, etc. △Cell Monitoring & Balancing (CMB) that monitors the voltage of each cell and balances charging △Battery Monitoring & Control Unit that communicates with the outside world △Current Sensor that senses the charging/discharging current of the battery △PMIC or regulator that supplies power to each unit.

The battery protection function protects battery cells from overcharge/discharge, blocks inrush current from the outside, and efficiently manages heat generated during charging and discharging.

CMB monitors the voltage of the cells, the temperature during charging and discharging, and the overall voltage of the battery pack connected in series.

BMS configuration varies depending on the application.

Applications such as power banks and portable devices often add a buck-boost circuit to either step down the voltage from a series-connected battery to power it via USB, or conversely, step up the voltage from USB to power a series-connected battery.

In applications such as industrial ESS where single battery packs are stacked in series to form a multi-module, voltages ranging from several hundred volts to several thousand volts are formed.

To ensure safety, insulation must be provided between each battery module, and communication between each module must be performed in an isolated state. Additionally, a relay rather than a MOSFET is used as the protection switch.

This explains how to configure a MOSFET as a battery protection switch.

The protection circuit unit can be located near each + and - terminal of the battery.

+ When positioned close to the terminal, the ground level is the same, so there is no need to consider offset when controlling communication, etc. However, the MOSFET used in the protection circuit uses an N-Channel MOSFET, which has the disadvantage of requiring the use of a gate driver with a charge pump function because the gate terminal must always have a higher voltage than the source terminal.

If the protection circuit is located close to the terminal, a charge pump is not required, but there is a part where the level changes on the left and right of the protection circuit, so separate isolation, etc. must be used for communication between the external and the BMS module.

Explains how to connect battery protection switch MOSFETs, introducing back-to-back Common Source and Common Drain.

The advantage of a common-source device is that it enables fast switching and is relatively inexpensive, as both switches are turned on and off with a single gate signal. However, if a problem occurs in one switch, it affects all MOSFETs.

Common Drain has two signals for the gate driver to drive each MOSFET. This requires a single gate driver to have two charge pump functions. Each MOSFET can be driven independently, ensuring excellent stability.

Director Yongjin Kim said that the most important parameter to consider when using MOSFETs in parallel is VGS(th).

As the difference in VGS(th) increases, the power loss flowing through each MOSFET increases. When VGS(th) differed by 1.6 V, it showed an 88% increase compared to 0 V.

When 6 MOSFETs are connected in parallel, there is no significant difference in conduction loss when fully turned on, but at the moment of turning on/off, the greater the VGS(th) deviation, the greater the loss.

Infineon's MOSFETs have a smaller minimum and maximum difference in VGS(th) than competitors, which is advantageous in applications where multiple MOSFETs are used in parallel.

Director Kim then introduced Infineon's BMS solution, saying, "BMS often uses MOSFETs in parallel," and "Customers often worry about how to solve the problem of increasing size when using MOSFETs in parallel."

Due to these issues, customers are demanding products with smaller RDS(on) in smaller packages.

Infineon has two product lines: StrongIRFET and OptiMOS.

Director Kim explained that OptiMOS is suitable for BMS because it must have lower heat rise for higher discharge current while reducing size.

He added that while it is okay to use previous-generation products if price competitiveness is sought, there is the problem of having to increase the number of parallel devices.

Infineon's packages used in BMS include D2PAK, D2PAK 7pin, and D2PAK 7pin+.>
To reduce the package size, there is the TO-Leadless (TOLL) package, and the TOLT package, which can cover high discharge current even with a small number of MOSFETs by connecting a heat sink to the top side.

If we reduce the size to 5 x 6, we can use SuperSO8 as protection MOSFET, and if we want to maintain parallel count at high current, we can use sTOLL package.

For small devices such as laptops, it is common to use a 3.3 x 3.3 package.

Common Source, Common Drain type MOSFETs used as battery protection switches must have low RDS(on), low thermal resistance, sufficient safe operating area, and strong resistance in linear mode.

Director Yongjin Kim then explained the EiceDRIVER-2ED4820-EM driver for driving the MOSFET, the current sensor, and the BMIC that controls the voltage and balances the cell.

The EiceDRIVER-2ED4820-EM driver supports 20~70V and consumes less than 5 microamperes of current from the IC in Sleep Mode. It has a built-in charge pump so it can drive N-Channel on the High Side (+ terminal side), and since two gate signals are output, the MOSFET is connected to Common Drain.

Infineon has 20~300V low and medium voltage MOSFETs, and high voltage silicon MOSFET products such as 600V and 950V.

XENSIV Magnetic Current Sensor comes in three package types: △PG-TSON-8 △PG-VSON-6 △PG-TDSO-16.

The PG-TSON-8 has the feature that the current rail passes through the chip, while the other two packages are external current rails.

The XENSIV Magnetic Current Sensor has two Over Current Detection functions and is powered by 3.3V.

It also provides protection functions equivalent to ASIL B for automotive applications.

In addition, Director Yongjin Kim introduced the TLE9012DQU and TLE9015DQU IC products and shared information about Infineon's diverse product line.

The webinar can be found at the link 'Understanding Battery Management System Components and Protection MOSFET Selection Criteria'.
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