Micron plunges 18% after hours… Guidance missed, US stock market blue light
Published2024.12.19 09:26Micron Technology, a leading US memory company, closed down 4% on the Nasdaq regular session on the 18th US local time, and subsequently recorded a decline of over 18% in after-hours trading, sending shockwaves through the market.
Related news
Micron 176-Layer NAND Launches First SATA SSD for Data Centers
Micron, which was the first to secure mass production technology for 176-layer NAND flash, launched consumer 176-layer SSDs in early this year, and has now released 176-layer NAND SATA SSDs for data center workloads, positioning itself at the forefront of cutting-edge NAND competition.
2022.08.08by 명세환 기자
The 200-Layer NAND Era: Samsung, SK, and Micron's Stacking Competition Heats Up
[Editor's Note] The NAND flash stacking in the semiconductor industry has exceeded 200 layers. Contrary to previous predictions that it would be difficult to exceed 200 layers except for Samsung Electronics, which stacked 128 layers with a single stack, it was Micron from the United States that took the lead in the stacking competition by stacking 232 layers. SK Hynix, not to be outdone, announced the commercialization of 238-layer NAND flash and entered the battle for the top spot in the 200-layer category. Samsung, while appearing to take a wait-and-see approach by mounting its 172-layer seventh-generation V-NAND on UFS 4.0 in early this year, showed confidence by stating that it has already completed securing 200-layer technology. We examined the clash of semiconductor manufacturers in the 200-layer NAND era.
2022.08.12by 명세환 기자
Micron Launches Next-Generation DDR5 Server DRAM
DRAM generational transition is being accelerated. Domestically, Samsung Electronics and SK Hynix are producing DDR5 DRAM and moving to secure the next-generation market share, while Micron, a strong competitor, showcased its technological capabilities by launching next-generation server DRAM in DDR5 specification. DDR5 is attracting market attention as a next-generation DRAM specification that offers advantages over its predecessor DDR4, including greater bandwidth and faster data transfer speed, lower power consumption, and increased maximum capacity.
2022.08.29by 명세환 기자
Micron Unveils High-Performance SSDs for Data Centers
Recently, there has been active launch of product lineups for data centers designed to handle artificial intelligence (AI) training, machine learning (ML), and high-performance computing (HPC) applications.
2023.03.09by 명세환 기자
HBM4 to be launched in 2026… “HBM on GPU”
HBM (High Bandwidth Memory), which has emerged to revolutionize processing speed, is a high-bandwidth memory that vertically connects multiple DRAM chips using TSV (Through Silicon Via) technology. The HBM market is dominated by Samsung Electronics and SK Hynix, with Micron following behind. According to TrendForce, last year's global HBM market share was SK Hynix at 50%, Samsung Electronics at 40%, and Micron at 10%. HBM4, which will be released in 2026 to meet demand from cloud service providers (CSPs) such as NVIDIA, Amazon, Google, and Microsoft, will introduce methods different from current semiconductors.
2023.11.30by 김예지 기자
