Infineon Maintains Solid Market Position Despite China-Fed GaN Patent War
Published2026.07.06 08:28A patent dispute between Infineon Technologies and China's Innoscience over gallium nitride (GaN) power semiconductors has emerged as a major issue in the global power semiconductor industry. With Infineon products withdrawn from the electronica China 2026 exhibition, we analyze which companies will be positioned favorably in the global market going forward.
Comments
Related news
Infineon accelerates GaN production on 300mm wafers, leading the power semiconductor market… First samples to be supplied in Q4 2025
Infineon Technologies (Korea CEO Lee Seung-soo) is ramping up full-scale production of gallium nitride (GaN) power semiconductors based on 300mm wafers and plans to provide first samples to customers in the fourth quarter of this year. Infineon is committed to actively driving technological innovation and market leadership through this acceleration of 300mm GaN production.
2025.07.03by 배종인 기자
Infineon launches industry's first automotive-grade 100V GaN transistor, accelerating its push into the electric vehicle and SDV markets.
Infineon Technologies (Korea Representative Lee Seung-soo) has launched an automotive-grade 100V GaN (gallium nitride) transistor product family that has obtained AEC-Q101 certification. The 'CoolGaN™ 100V G1' product family, which began mass production this time, includes high-voltage (HV) transistors and bidirectional switches, and is attracting attention as a key power solution for electric vehicles and software-defined vehicles (SDV).
2025.10.16by 배종인 기자
'GaN' Positions Itself as a Core Pillar of Future Power Technology… Infineon’s Medium-Voltage GaN Bidirectional Switches and 300mm Power GaN Technology Lead the Paradigm Shift in Power Electronics
Infineon Technologies AG's medium-voltage GaN bidirectional switch (CoolGaN™ BDS 40V G3) and 300mm power GaN technology are being recognized as "game changers" in the industry and are emerging as a core pillar of next-generation power systems.
2026.01.05by 배종인 기자
Infineon Forecasts GaN Market to Reach $3 Billion by 2030… Expanding Applications in AI and Robotics
Infineon Technologies presented in its annual report 'GaN Insights 2026' that the gallium nitride (GaN) power semiconductor market could grow to approximately $3 billion by 2030. The report estimates the market size in 2026 at $920 million, projecting 58% growth compared to 2025 ($584 million). Infineon explained that by applying a common drain design with a double gate structure to high-voltage GaN bidirectional switches (BDS), die size reduction is possible compared to conventional back-to-back configurations. Additionally, the company noted that GaN application areas are expanding to include AI data centers, robotics, electric vehicles, renewable energy, and digital health and quantum computing.
2026.02.12by 명세환 기자
.jpg)
Humanoids: The Key is Motor Control and Power Efficiency
The key to humanoid robot design lies in precise internal systems rather than external appearance similar to humans. Technical documentation recently released by Texas Instruments (TI) emphasizes the importance of high-degree-of-freedom motor control, high-efficiency and compact design utilizing GaN-based power devices, and precision control through high-resolution current and voltage sensing. When combined with redundant architecture considering functional safety and fast shutdown design, a reliable robot capable of operating in shared spaces with humans can be completed.
2026.03.10by 배종인 기자
