Microchip and Navitas Jointly Develop 800V DC Reference Design for AI Data Centers

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Microchip and Navitas Jointly Develop 800V DC Reference Design for AI Data Centers

Published2026.10.06 09:20

Combining GaN Power Devices and Digital Power Control, Accelerating Design Implementation Based on OCP 800V DC Standard

As AI data centers expand to support high-performance GPU clusters, the transition to 800V DC rack power architecture to improve power distribution efficiency and power density is spreading across the industry. Microchip Technology and Navitas Semiconductor have launched a reference platform addressing this trend.

Microchip Technology (Asia General Manager and Korea Representative: Han Byung-don) and Navitas Semiconductor announced on the 6th that they have jointly developed an 800V DC-to-6V DC reference design for AI data center rack power applications.

The platform combines Microchip's digital power control and security technology with Navitas' GaNFast™ gallium nitride (GaN) power devices to support power conversion implementation compliant with the OCP (Open Compute Project) 800V DC standard.

By providing reference hardware, software, and design documentation together, design risk can be reduced and development cycles shortened.

Digital Power Control and Hardware Security

The platform's core components are Microchip's dsPIC33AK digital signal controller (DSC) and TA100 CryptoAuthentication™ security IC.

The dsPIC33AK256MPS306 product family features a 200MHz 32-bit core, 78ps high-resolution pulse width modulator (PWM), and 12-bit ADC operating at up to 40MSPS, and provides post-quantum cryptography algorithm library support and hardware-accelerated encryption capabilities.

The TA100 supports establishing a hardware root of trust through secure boot, authentication, and protected firmware updates.

Improved Efficiency with Single-Stage 800V→6V Conversion

On the primary side of the power delivery board (PDB), 16 units of Navitas' NV6034 650V GaNFast FETs are arranged in a stacked half-bridge topology.

The PDB is designed to achieve maximum peak efficiency of 96% and power density of 2,100W/in³ under full-load conditions at 1MHz switching frequency.

The two companies explain that integrating the conventional two-stage conversion of 800V DC-to-50V DC and 50V DC-to-6V DC into a single converter improves overall conversion efficiency.

Improvements in total cost of ownership (TCO) are also expected.

#GaN #데이터센터 #AI 인프라 #전력반도체 #800V DC #Microchip #전력변환 #Navitas Semiconductor #dsPIC33AK

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