“Just Changing Components Is a Misconception”… The SiC & GaN Era: 10 Practical Checklists for Developers
Published2026.04.10 10:24Silicon carbide (SiC) and gallium nitride (GaN) are garnering attention as key components that enable higher voltages and temperatures along with faster switching, thereby enhancing efficiency in electric vehicles, AI data centers, industrial power supplies, and renewable energy facilities. We examined what developers need to verify in practice when using GaN and SiC semiconductors through materials from major power semiconductor companies such as Infineon, TI, and ST, as well as expert advice.
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[2025 e4ds Tech Day] "GaN, the Future of Power Semiconductors, is Ready for Commercialization in 48V Power Systems."
텍사스 인스트루먼트(Texas Instruments, TI) 김승목 차장은 지난 9월9일 개최된 ‘2025 e4ds Tech Day’ 행사에서 ‘TI GaN FET으로 전력 밀도가 높고 효율적인 디지털 파워 시스템 구현하기’라는 주제로 발표하며, 전기차, 재생에너지, 고효율 전원장치 등 차세대 산업의 핵심은 전력 반도체라고 강조했다. 김승목 차장은 먼저 전력 반도체의 진화를 짚으며, “20년 전까지만 해도 IGBT가 주류였지만, SiC가 등장하면서 1,200V 이상 고전압 시스템에 적용되기 시작했다. 그러나 스위칭 주파수 측면에서는 한계가 있었다. 반면에 GaN은 600∼650V급 전압에서 12㎒까지 스위칭이 가능해 전력 밀도를 획기적으로 높일 수 있다”고 언급했다.
2025.09.29by 배종인 기자
[2025 e4ds Tech Day] "Although a latecomer to GaN semiconductors, we are rapidly advancing by overcoming technological limitations."
Lee Hyung-seok, Senior Researcher at the Electronics and Telecommunications Research Institute (ETRI), presented "Development Status and Market Trends of GaN Wide Bandgap Power Semiconductor Technology" at the '2025 e4ds Tech Day' event held on September 9th, providing an in-depth introduction to the development status and future prospects of GaN power semiconductors. Researcher Lee stated, "Although GaN is a latecomer, it is advancing rapidly while overcoming technical limitations," and forecasted that "next-generation technologies such as remote epi will be able to open new horizons for power semiconductors."
2025.09.30by 배종인 기자
'GaN' Positions Itself as a Core Pillar of Future Power Technology… Infineon’s Medium-Voltage GaN Bidirectional Switches and 300mm Power GaN Technology Lead the Paradigm Shift in Power Electronics
Infineon Technologies AG's medium-voltage GaN bidirectional switch (CoolGaN™ BDS 40V G3) and 300mm power GaN technology are being recognized as "game changers" in the industry and are emerging as a core pillar of next-generation power systems.
2026.01.05by 배종인 기자
Onsemi to Defend 2025 Performance While Recording Highest Cash Generation
On Semiconductor achieved a record high free cash flow margin of 24% in its 2025 annual results. Fourth quarter revenue reached $1.53 billion, and profitability metrics remained stable. The company returned the full $1.4 billion in annual free cash flow to shareholders through share buybacks. The company also presented a strategy to expand collaboration in GaN power semiconductors alongside technology investments focused on automotive, industrial, and AI data center power sectors. Going forward, the company is focusing on securing room for profitability improvement as the market enters a recovery phase.
2026.02.11by 명세환 기자
Infineon Forecasts GaN Market to Reach $3 Billion by 2030… Expanding Applications in AI and Robotics
Infineon Technologies presented in its annual report 'GaN Insights 2026' that the gallium nitride (GaN) power semiconductor market could grow to approximately $3 billion by 2030. The report estimates the market size in 2026 at $920 million, projecting 58% growth compared to 2025 ($584 million). Infineon explained that by applying a common drain design with a double gate structure to high-voltage GaN bidirectional switches (BDS), die size reduction is possible compared to conventional back-to-back configurations. Additionally, the company noted that GaN application areas are expanding to include AI data centers, robotics, electric vehicles, renewable energy, and digital health and quantum computing.
2026.02.12by 명세환 기자
