Infineon's InnoScience GaN Patent Lawsuit, Not Just a Litigation, but Future AI and Data Center Markets at Risk
Published2024.08.08 11:27The patent infringement lawsuit between global semiconductor company Infineon Technologies and China's Innoscience is analyzed to become an important turning point beyond simple technical infringement, decisive for securing market leadership in GaN (gallium nitride) power semiconductors for future artificial intelligence (AI) servers and data centers.
관련뉴스
Infineon acquires GaN Systems… Expanding its presence in power semiconductors
Infineon Technologies (hereinafter referred to as Infineon) is acquiring a company with leading GaN technology, thereby solidifying its position in the power semiconductor field.
2023.10.26by 성유창 기자
SiC and GaN also draw attention in the automotive semiconductor market growth driven by xEV
An analyst from the Yole Group stated, "OEMs are continuing to make strategic investments in semiconductors to adapt to the changing automotive industry environment," and added, "Attention will be focused on compound semiconductors such as SiC and GaN in the power device market for xEV."
2024.02.01by 성유창 기자
.jpg)
ROHM Adopts 'EcoGaN™' Energy AC Adapter C4 Duo
ROHM's 650V GaN device (EcoGaN™) has been adopted in Innergie's 45W output AC adapter (fast charger) 'C4 Duo', a brand of Taiwan-based Delta Electronics, Inc.
2024.02.28by 배종인 기자
ST, New Synchronous Rectifier Controller Improves Converter Efficiency
STMicroelectronics has released a new SRK1004 synchronous rectifier controller that enhances the efficiency of silicon or GaN converters, supporting simplified operation and energy savings in industrial power supplies, portable device chargers, and AC/DC adapters.
2024.03.05by 배종인 기자
ETRI Helps Domestic Companies Design and Produce GaN Semiconductor Chips
The Electronics and Telecommunications Research Institute (ETRI) held a public presentation on the fourth of this month at its headquarters with the attendance of relevant stakeholders from industry, academia, and research institutions to announce the 150 nanometer (0.15um) gallium nitride microwave integrated circuit (MMIC) design kit (PDK) developed through the Ministry of Science and ICT's "Compound Semiconductor Foundry Construction Project for Communications," which is at world-class level.
2024.04.05by 배종인 기자
